The Epi-Lab.com applies four CVD reactors. All are made by AIXTRON.

   The first is the AIXTRON200 system for GaAs-based and InP-based epitaxy. It uses AsH₃ and PH₃ carriers for group V elements, TMGa, TMIn, TMAl metal-organics for group III elements and DMZn, SiH₄, CBr₄ carriers for dopant elements. The system is equipped with halogen heating module and gas-foil susceptor rotation solution. Supplied hydrogen is extremely purified by the serial system. Existing glove box with nitrogen atmosphere allows packing and unpacking of wafers preventing from oxygen. Equipment is located in a clean-room area together with characterisation instruments. The system has been successfully used for years and the high quality of final optimised materials has been reached. The interest in diluted nitrides resulted in a purchase of the DMHy source for development of around 1.3mm optoelectronics on GaAs. For the whole period of this reactor work completed processes succeeded in structures that have been highly valued by subsequent customers.

 
   The next system is AIXTRON200RF-S machine for growth of GaN-based materials. It provides NH3 carrier for group V element, TMGa, TMIn, TMAl metal-organics for group III elements and SiH₄, Cp₂Mg carriers for dopant elements. System is equipped with RF-heating module, nitrogen glove box, gas-foil planetary rotation solution and in-situ characterisation by reflectometry. The system is primarily used for growth of nitrides on sapphire. High quality layers of GaN on developed nucleation layers allow producing device structures with best parameters. Similarly, outworked AlGaN technology meets highest MOCVD standards.

   The third AIXTRON200 reactor which joined company’s facilities is primary oriented for the growth of InP-based materials. It's larger chamber allows to obtain higher samples uniformity required for commercial applications. It also lowers growth cost for small-scale production.

   The VP508 platform is based upon the Epigress horizontal Hot-Wall reactor configuration, with its well proven and established performance. The system can process on single 2" and 3" and 4" wafers as well as multiple 2" wafers, i.e. in a 3x2" configuration. It can be configured to include one or two growth cells. A wide range of gas mixing configurations are available to accommodate the specific needs. The technique ensures the best possible homogeneity in thickness and doping by rotating the wafer or wafers during growth. The reactor is intended for atmospheric or reduced-pressure growth of both n- and p-type SiC in a dual growth cell configuration. The normal operating temperature is between 1500 and 1600°C. That the newest Epigress system for SiC-based epitaxy uses SiH₄ and C₃H₈ precursors for silicon and carbon source, diluted in H₂, TMAl metal-organic and N₂ for in situ p-type and n-type dopant elements, respectively.

• Photoluminescence mapping system ACCENT RPM2000. The device allows measuring spectra and maps in the 330 – 1700nm range.
• HR XRD system
• Hall system
• Low temperature photoluminescence setup
• SIMS
• Optical microscopy
• AFM, SEM, TEM
• DLTS
• CV-profiling
• Contact to other semiconductor characterisation methods