Epi-Lab.com has been set up as an innovative and progressive initiative to enhance research, innovation and enterprise in the semiconductor sector and develop cutting-edge technology, conducting its activity within the Institute of Electronic Materials Technology situated in Warsaw, Poland. Our company employs top notch specialists in the field of III-V and IV-IV semiconductor epitaxy, combining tradition and experience with modern knowledge and technology. Apart from manufacturing as well as developing low volume advanced research structures, we are actively engaged in commercial activity. One SiC Chemical Vapour Deposition and three Metal Organic Chemical Vapour Deposition (MOCVD) facilities owned by our company enable the production and supply of exceptionally high quality GaAs-, InP-, GaN- and SiC- related epitaxial stacks used either for tests or device purposes, which include single layer templates, VCSELs, ELOG or QDs structures. Both basic and advanced characterization methods such as optical, microscopic and electrical method, x-ray and particle scattering are regularly applied by our personnel. Epi-Lab.com is committed to providing our clients with cost-effective products of superior quality. It also actively participates in long-term research programmes, which aim at accelerating progress in semiconductor devices technology.

     Epi-Lab.com predominantly concentrates on the development of the technology of epitaxial semiconductor structures production by MOCVD and CVD method. On a day-to-day basis we work with A3B5 compounds, SiC and C, the brief characterization of which is presented below.

• A3B5: GaAs- , InP-, GaSb- and GaN-related;
 - GaAs, AlAs, AlGaAs, InP, InGaAs, InGaAsP, InAlAs, InGaP, GaN, AlN, GaAlN, GaInN, GaSb, GaAlSb, GaInSb, InSb, GaAlAsSb, GaInAsSb, etc.
 - Areas of application: transistors, F-P lasers, VCSEL lasers, QCL lasers, LED diodes, detectors, varactor diodes, microwave diodes, SOA, waveguides, etc.
 - Structures: quantum wells (QWs), superlattices (SLs), quantum dots (QDs), etc.


• SiC: n-type and p-type; 0,1-100 micrometers;
 - Areas of application: Schottky diodes, transistors, pin diodes;


• Graphene;
 - Obtained by means of sublimation and CVD method on SiC, Cu, Ni and W substrates;


• Characterization: AFM, STM, HRTEM, SEM, PL, Hall, C-V, XRD, DIC (Nomarsky), SIMS, absorption, etc.

     Epi-Lab.com is a constantly developing company which boasts the following achievements:
Epitaxial heterostructures:

• Graphene obtained by both sublimation of SiC and innovative CVD method on SiC;
• Quantum cascade lasers (QCL) grown on InP;
• GaN/AlGaN, AlInN/GaN, GaAs/AlGaAs, InP/InGaAs HEMTs transistors;
• GaAs/AlGaAs and InP/InGaAs VCSEL lasers;
• GaN/AlGaN photodetectors;
• GaAs/AlGaAs 808nm lasers;
• InGaAsP lasers;
• InGaP/Ge solar cells;
• SiC Schottky diodes;
• GaN/AlGaN UV diodes;
• GaN/InGaN structures;